logo

FDG361N Datasheet, Fairchild Semiconductor

FDG361N mosfet equivalent, n-channel mosfet.

FDG361N Avg. rating / M : 1.0 rating-12

datasheet Download

FDG361N Datasheet

Features and benefits


* 0.6 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V
* Low gate charge (3.7nC typical)
* Fast switching speed
* High performance tr.

Application

where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features
* 0.6 A, 100 V. RDS(ON)= 500 mΩ.

Image gallery

FDG361N Page 1 FDG361N Page 2 FDG361N Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts